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Data Sheet No. PD60191 revD
IR21091 (S) & (PbF)
HALF-BRIDGE DRIVER
Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Product Summary
V OFFSET 600V max.
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Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Logic and power ground +/- 5V offset.
Internal 500ns dead-time, and programmable
up to 5us with one external R DT resistor
Lower di/dt gate driver for better noise immunity
The dual function DT/SD pin input turns off both
channels.
Available in Lead-Free
I O +/- 120 mA / 250 mA
V OUT 10 - 20V
ton/off (typ.) 680 & 170 ns
Dead time 500 ns
(programmable up to 5uS)
Packages
Description
The IR21091(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependant high and
low side referenced output channels. Proprietary HVIC
8 Lead PDIP
8 Lead SOIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to
3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-
conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high
side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V CC
V CC
V B
IN
IN
HO
SD
DT/SD
COM
V S
LO
TO
LOAD
IR21091(S)
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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